Computational analysis of a Cu₃VS₄-based solar cell with a V₂O₅ back surface layer

This study has described the development and computational evaluation of Cu 3 VS 4 (CVS) based highly potential thin film solar cell where ZnS is exploited as the transparent layer and V 2 O 5 as the back surface field (BSF) layer, respectively, to form the n-ZnS/p-Cu 3 VS 4 /p + -V 2 O 5 hetero-junction. The investigation has highlighted the significant influence of the V 2 O 5 BSF layer on the device performance. The standalone n-ZnS/p-Cu 3 VS 4 device exhibits an open circuit voltage (V OC ) of 0.87 V, a short circuit current (J SC ) of 33.89 mA/cm 2 , a fill factor (FF) of 86.72%, and a power conversion efficiency (PCE) of 25.68%. The incorporation of the V 2 O 5 BSF layer has enhanced the PCE to 28.33%, where V OC reached 0.94 V, J SC to 34.39 mA/cm 2 , and FF to 87.47%. This improvement in V OC has been attributed to the V 2 O 5 BSF layer, leading to increased built-in potential and reduced surface recombination velocity at device interfaces. These findings suggest promising prospects for advancing high-efficiency CVS dual-heterojunction (DH) PV cells in the coming days.