TLM-based numerical extraction for CMOS-compatible N+-InGaAs ohmic contacts on 200mm Si substrates

• A TLM-based numerical extraction methodology is first described and calibrated using contacts on SOI. • This methodology is then applied on CMOS-compatible N + -InGaAs ohmic contacts integrated on 200mm Si substrates. • The extraction refinement brought by the numerical methodology allows to reduce errors by 15.3% compared to classical TLM extraction. • State-of-the-art level ρ c = 7,5.10 -8 Ω.cm 2 is obtained using 0.35x0.35µm W/TiN/Ti contact on N + -InGaAs. • The obtained ρ c value is compatible with 6G THz applications and comparable to the state-of-the-art. We report the results of a TLM-based numerical extraction methodology applied on CMOS-compatible N + -InGaAs ohmic contacts integrated with dielectrics on 200mm Si substrates. The methodology is first described and calibrated using contacts on SOI. Then, we applied this method on W/TiN/Ti on N + -InGaAs contacts to obtain state-of-the-art level ρ c = 7,5.10 -8 Ω.cm 2 for 0.35x0.35µm contact dimension, which is close to relevant contact size of the targeted application (THz HBT for 6G).