Evaluation of Self-Heating Effects in AlGaN Channel Heterostructure field-effect Transistors grown on bulk AlN substrate

Authors

Jash Mehta (ORCID: https://orcid.org/0000-0002-4278-6596)
Y. Cordier (ORCID: https://orcid.org/0000-0003-3720-9409)
Farid Medjdoub (ORCID: https://orcid.org/0000-0002-4753-4718)
B. Boudart (ORCID: https://orcid.org/0000-0001-7821-8382)
Philippe Ferrandis (ORCID: https://orcid.org/0000-0003-2901-2120)
Y. Guhel (ORCID: https://orcid.org/0000-0002-1963-2660)
Julien Bassaler (ORCID: https://orcid.org/0000-0002-6736-9852)

Institutions

Centre National de la Recherche Scientifique (FR)
Université de Lille (FR)
Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (FR)
GREYC (FR)
Institut Néel (FR)
Laboratoire Universitaire des Sciences Appliquées de Cherbourg
Université Polytechnique Hauts-de-France (FR)
École Centrale de Lille (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2024-09-16
Primary Topic: GaN-based semiconductor devices and materials
Type: article
Field-Weighted Citation Impact: 0.00

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article

Evaluation of Self-Heating Effects in AlGaN Channel Heterostructure field-effect Transistors grown on bulk AlN substrate

Jash Mehta, Y. Cordier, Farid Medjdoub, B. Boudart et al.

Sep 16, 2024

SPIRE - Sciences Po Institutional REpository

GaN-based semiconductor devices and materials

article

Evaluation of Self-Heating Effects in AlGaN Channel Heterostructure field-effect Transistors grown on bulk AlN substrate

Jash Mehta, Y. Cordier, Farid Medjdoub, B. Boudart, Philippe Ferrandis, Y. Guhel, Julien Bassaler

September 16, 2024article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Centre National de la Recherche Scientifique (FR), Université de Lille (FR), Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (FR), GREYC (FR), Institut Néel (FR), Laboratoire Universitaire des Sciences Appliquées de Cherbourg, Université Polytechnique Hauts-de-France (FR), École Centrale de Lille (FR)

Openalex Percentile: Top 88%

GaN-based semiconductor devices and materials

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