Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC
We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background doping, and kV-range breakdown voltages; avalanche capability (a property of Si and SiC devices) is demonstrated also for vertical devices on silicon substrate, enabling reliable high-voltage operation; (ii) threshold voltage instabilities are related to the presence of interface and border traps, whose contribution can be modeled with great accuracy by prior characterization of the trap distribution profile; (iii) gate stack reliability is mainly limited by oxide breakdown; factors limiting off-state failure are discussed. Strategies for device improvement are proposed, also based on the learnings from silicon and silicon carbide technology.
Authors
- Paolo Pavan (ORCID: https://orcid.org/0000-0001-5420-1797)
- Nicolò Zagni (ORCID: https://orcid.org/0000-0003-2454-1883)
- Enrico Brusaterra (ORCID: https://orcid.org/0000-0002-8801-2748)
- G. Verzellesi (ORCID: https://orcid.org/0000-0001-5770-6512)
- Farid Medjdoub (ORCID: https://orcid.org/0000-0002-4753-4718)
- Matteo Buffolo (ORCID: https://orcid.org/0000-0002-9255-6457)
- Manuel Fregolent (ORCID: https://orcid.org/0000-0003-0801-2260)
- G. Zappalà (ORCID: https://orcid.org/0000-0003-1688-2880)
- D. Favero (ORCID: https://orcid.org/0000-0002-5918-9472)
- A. Marcuzzi (ORCID: https://orcid.org/0000-0002-5856-1957)
- M. Tomasi (ORCID: https://orcid.org/0000-0002-1448-6131)
- Matteo Meneghini (ORCID: https://orcid.org/0000-0003-2421-505X)
- F. Brunner
- Eldad Bahat‐Treidel (ORCID: https://orcid.org/0000-0001-6794-6907)
- Oliver Hilt (ORCID: https://orcid.org/0000-0001-8091-5558)
- Santi Carlo De
- Gaudenzio Meneghesso (ORCID: https://orcid.org/0000-0002-6715-4827)
- Christian Huber (ORCID: https://orcid.org/0000-0002-8969-8577)
- Zanoni Enrico
- Y. Hamadoui
Institutions
- University of Modena and Reggio Emilia (IT)
- Centre National de la Recherche Scientifique (FR)
- University of Padua (IT)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Ferdinand-Braun-Institut (DE)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- Consorzio Nazionale Interuniversitario per la Nanoelettronica (IT)
- Robert Bosch (Germany) (DE)
Publication Details
- Published
- 2024-12-07
- DOI
- https://doi.org/10.1109/iedm50854.2024.10873536
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- European Commission
- Electronic Components and Systems for European Leadership