Study of Processing Conditions on the Molybdenum–Copper Contact Metallization on a <i>p</i>-Type Silicon (100) Wafer for Thermal Management Applications

Thermal management is a key concern for energy storage and power delivery applications in electric vehicles, wind, solar, geothermal power, data centers, and microwave devices because of the increased power density from the miniaturization of power electronics. Diamond offers extraordinary technological opportunities for thermal management owing to its excellent thermal conductivity. However, the method of deposition of the diamond by microwave plasma-assisted chemical vapor deposition (MPECVD) necessitates high temperatures, leading to the deterioration of the metallization employed in high-frequency and high-power electronic devices. Therefore, this study involves the deposition of molybdenum and copper (Cu) thin films onto p -type silicon (Si) (100) substrates by magnetron sputtering. A physical mask was utilized to create dot patterns followed by annealing of metalized p -type Si (100) wafer in argon and hydrogen (H 2 ) atmosphere at 380 °C for 1 h. The current ( I )–voltage ( V ) characteristics and the Hall effect measurements were employed in the as-deposited state, and after annealing in Ar and H 2 to study the influence of processing conditions. The current work illustrated ohmic contact resistance responses in the as deposited and post-annealing treatments. This led to the extraction of the electrical properties of p -type Si (100) wafers using Mo–Cu contact.