Experimental study of gain characteristics in relation to quantum-well width of deep-ultraviolet laser diodes
The gain characteristics of electrically injected AlGaN-based deep-ultraviolet laser diodes were studied with respect to their quantum-well (QW) width dependence by the analysis of the threshold currents and gains for various cavity lengths. Among the fabricated QWs with widths of d = 9, 4.5, and 3 nm, the QW with the smallest width of 3 nm was found to have the highest material gain and lowest transparency carrier density. In contrast to recent arguments in favor of wider QWs for deep-ultraviolet laser diodes, the strategy of narrowing QWs is still found to be effective in practical terms of reducing the threshold current density.
Authors
- Ziyi Zhang (ORCID: https://orcid.org/0000-0001-9617-9049)
- Koji Aoto (ORCID: https://orcid.org/0009-0004-0165-9744)
- Akira Yoshikawa (ORCID: https://orcid.org/0000-0002-1732-5202)
- Hiroshi Amano (ORCID: https://orcid.org/0000-0002-7598-2593)
- Maki Kushimoto (ORCID: https://orcid.org/0000-0003-3974-7139)
- Chiaki Sasaoka (ORCID: https://orcid.org/0000-0002-0774-8666)
Institutions
- Asahi Kasei (Japan) (JP)
- Nagoya University (JP)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-10-28
- DOI
- https://doi.org/10.1063/5.0240488
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.93
Funders
- Japan Society of Applied Physics