Mott resistive switching initiated by topological defects
Avalanche resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation, the nature of the local stochastic fluctuations that drive the formation of metallic regions within the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the origin of resistive switching in a V<sub>2</sub>O<sub>3</sub>-based device under working conditions. V<sub>2</sub>O<sub>3</sub> is a paradigmatic Mott material, which undergoes a first-order metal-to-insulator phase transition together with a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metallic phase. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects appearing in the shear-strain based order parameter that describes the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate such topological defects and achieve the full dynamical control of the electronic Mott switching. Topology-driven, reversible electronic transitions are relevant across a broad range of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals.
Authors
- L. S. I. Veiga (ORCID: https://orcid.org/0000-0003-0515-0588)
- Michele Fabrizio (ORCID: https://orcid.org/0000-0002-2943-3278)
- Alessandra Milloch (ORCID: https://orcid.org/0000-0003-1790-0462)
- Mariela A. Menghini (ORCID: https://orcid.org/0000-0002-1744-798X)
- S. S. Dhesi (ORCID: https://orcid.org/0000-0003-4966-0002)
- Jean‐Pierre Locquet (ORCID: https://orcid.org/0000-0002-4214-7081)
- Wei-Fan Hsu (ORCID: https://orcid.org/0000-0001-5234-3804)
- Mauro Spera (ORCID: https://orcid.org/0000-0001-9041-364X)
- Claudio Giannetti (ORCID: https://orcid.org/0000-0003-2664-9492)
- Selene Mor (ORCID: https://orcid.org/0000-0002-9067-8055)
- Simon Mellaerts (ORCID: https://orcid.org/0000-0002-6715-3066)
- Francesco Maccherozzi (ORCID: https://orcid.org/0000-0003-4074-2319)
- Ignacio Figueruelo‐Campanero (ORCID: https://orcid.org/0000-0001-5144-9375)
- Jin Won Seo (ORCID: https://orcid.org/0000-0003-4937-0769)
Institutions
- Università Cattolica del Sacro Cuore (IT)
- Madrid Institute for Advanced Studies (ES)
- Universidad Complutense de Madrid (ES)
- Scuola Internazionale Superiore di Studi Avanzati (IT)
- Diamond Light Source (GB)
- Instituto de Óptica "Daza de Valdés" (ES)
- KU Leuven (BE)
Publication Details
- Journal
- Nature Communications
- Published
- 2024-10-31
- DOI
- https://doi.org/10.1038/s41467-024-53726-z
- Citations
- 4
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.83
Funders
- Diamond Light Source
- European Commission
- Fonds Wetenschappelijk Onderzoek
- Ministero dell’Istruzione, dell’Università e della Ricerca
- KU Leuven
- Università Cattolica del Sacro Cuore
- Agencia Estatal de Investigación
- Interreg