Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation
The effects of a pulsed, focused, deep-UV (4.66 eV) laser on wide and ultra-wide bandgap semiconductors were investigated with photoluminescence (PL) and Raman spectroscopy. Three semiconductor single crystals were studied: silicon carbide (6H-SiC), gallium nitride (GaN), and gallium oxide (β-Ga 2 O 3 ). Atomic emission lines from neutral Ga or Si were observed during the laser-damage process. For all three semiconductors, PL mapping (3.49 eV laser excitation) of the damaged material revealed visible emission bands in the 2.6–2.8 eV range, attributed to point defects. Raman spectra (2.33 eV excitation) showed a reduction in the Raman peak intensities in the damaged region, along with weak PL bands around 1.9–2.1 eV.
Authors
- John Stuart McCloy (ORCID: https://orcid.org/0000-0001-7476-7771)
- Clint D. Frye (ORCID: https://orcid.org/0000-0002-6370-8167)
- Matthew D. McCluskey (ORCID: https://orcid.org/0000-0002-0786-4106)
- Jesse Huso (ORCID: https://orcid.org/0000-0002-8894-967X)
- Lars F. Voss (ORCID: https://orcid.org/0000-0002-6349-8219)
- Joel B. Varley (ORCID: https://orcid.org/0000-0002-5384-5248)
Institutions
- Lawrence Livermore National Laboratory (US)
- Klar Scientific (United States) (US)
Publication Details
- Journal
- Optical Materials Express
- Published
- 2024-10-31
- DOI
- https://doi.org/10.1364/ome.539744
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Basic Energy Sciences
- Lawrence Livermore National Laboratory