Small ZnIn<sub>2</sub>S<sub>4</sub> Nanosheets with Abundant Edge-Active Sites Modified with MoS<sub>2</sub> Nanosheets for Hydrogen Evolution
Due to their unique optical properties and large specific surface areas, two-dimensional (2D) layered materials hold great promise for a wide range of applications in photocatalysis. A one-step, low-temperature reflow method was employed to synthesize 2D small-sized ZnIn2S4 (S-ZIS) nanosheets with the assistance of CH3NO and C6H5Na3O7 as surfactants. The synthesized S-ZIS, consisting of preferentially exposed edge facet (102) with an average size of approximately 200 nm, exhibited a larger specific surface area and shortened carrier lifetime compared to traditional ZnIn2S4 (ZIS). Furthermore, the separation and migration of photogenerated electron–hole pairs in MoS2-modified S-ZIS (S-ZIS/MoS2) were effectively promoted due to the intimate contact between MoS2 and the S-ZIS interface. Under simulated solar light irradiation, the optimum hydrogen evolution rate was achieved for the binary S-ZIS/MoS2-3 heterostructure, reaching 21.66 mmol·g–1·h–1, which was 3 and 21 times higher than that of S-ZIS and ZIS, respectively. Additionally, an apparent quantum yield (AQY) of 76% was achieved at 400 nm. This study provides valuable insights into the reasonable design and optimization of 2D heterostructures with preferably exposed edge-active sites and offers an innovative strategy for the development of efficient composite photocatalytic systems.
Authors
- Congwei Wang (ORCID: https://orcid.org/0000-0001-7316-870X)
- Kaiying Wang (ORCID: https://orcid.org/0000-0002-0018-0959)
- Zheyan Wang
- Gang Li (ORCID: https://orcid.org/0000-0002-8080-4134)
- Xiaoyan Liu (ORCID: https://orcid.org/0000-0003-1905-1740)
Institutions
- Chinese Academy of Sciences (CN)
- University of South-Eastern Norway (NO)
- Energy Research Institute (CN)
- Institute of Coal Chemistry (CN)
- Taiyuan University of Technology (CN)
- Minnan Normal University (CN)
Publication Details
- Journal
- ACS Applied Nano Materials
- Published
- 2024-10-31
- DOI
- https://doi.org/10.1021/acsanm.4c04822
- Citations
- 6
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- National Natural Science Foundation of China
- Shanxi Scholarship Council of China
- Natural Science Foundation of Shanxi Province
- Youth Innovation Promotion Association of the Chinese Academy of Sciences
- Fund for Shanxi Key Subjects Construction