Small ZnIn<sub>2</sub>S<sub>4</sub> Nanosheets with Abundant Edge-Active Sites Modified with MoS<sub>2</sub> Nanosheets for Hydrogen Evolution

Due to their unique optical properties and large specific surface areas, two-dimensional (2D) layered materials hold great promise for a wide range of applications in photocatalysis. A one-step, low-temperature reflow method was employed to synthesize 2D small-sized ZnIn2S4 (S-ZIS) nanosheets with the assistance of CH3NO and C6H5Na3O7 as surfactants. The synthesized S-ZIS, consisting of preferentially exposed edge facet (102) with an average size of approximately 200 nm, exhibited a larger specific surface area and shortened carrier lifetime compared to traditional ZnIn2S4 (ZIS). Furthermore, the separation and migration of photogenerated electron–hole pairs in MoS2-modified S-ZIS (S-ZIS/MoS2) were effectively promoted due to the intimate contact between MoS2 and the S-ZIS interface. Under simulated solar light irradiation, the optimum hydrogen evolution rate was achieved for the binary S-ZIS/MoS2-3 heterostructure, reaching 21.66 mmol·g–1·h–1, which was 3 and 21 times higher than that of S-ZIS and ZIS, respectively. Additionally, an apparent quantum yield (AQY) of 76% was achieved at 400 nm. This study provides valuable insights into the reasonable design and optimization of 2D heterostructures with preferably exposed edge-active sites and offers an innovative strategy for the development of efficient composite photocatalytic systems.

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Publication Details

Journal
ACS Applied Nano Materials
Published
2024-10-31
DOI
https://doi.org/10.1021/acsanm.4c04822
Citations
6
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
1.25

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article

Small ZnIn2S4 Nanosheets with Abundant Edge-Active Sites Modified with MoS2 Nanosheets for Hydrogen Evolution

Congwei Wang, Kaiying Wang, Zheyan Wang, Gang Li et al.
6 citations
ACS Applied Nano Materials
Chalcogenide Semiconductor Thin Films
1.25
article

Small ZnIn2S4 Nanosheets with Abundant Edge-Active Sites Modified with MoS2 Nanosheets for Hydrogen Evolution

Congwei Wang, Kaiying Wang, Zheyan Wang, Gang Li, Xiaoyan Liu
article en
6 citations

Abstract

Due to their unique optical properties and large specific surface areas, two-dimensional (2D) layered materials hold great promise for a wide range of applications in photocatalysis. A one-step, low-temperature reflow method was employed to synthesize 2D small-sized ZnIn2S4 (S-ZIS) nanosheets with the assistance of CH3NO and C6H5Na3O7 as surfactants. The synthesized S-ZIS, consisting of preferentially exposed edge facet (102) with an average size of approximately 200 nm, exhibited a larger specific surface area and shortened carrier lifetime compared to traditional ZnIn2S4 (ZIS). Furthermore, the separation and migration of photogenerated electron–hole pairs in MoS2-modified S-ZIS (S-ZIS/MoS2) were effectively promoted due to the intimate contact between MoS2 and the S-ZIS interface. Under simulated solar light irradiation, the optimum hydrogen evolution rate was achieved for the binary S-ZIS/MoS2-3 heterostructure, reaching 21.66 mmol·g–1·h–1, which was 3 and 21 times higher than that of S-ZIS and ZIS, respectively. Additionally, an apparent quantum yield (AQY) of 76% was achieved at 400 nm. This study provides valuable insights into the reasonable design and optimization of 2D heterostructures with preferably exposed edge-active sites and offers an innovative strategy for the development of efficient composite photocatalytic systems.

ACS Applied Nano MaterialsVol. 7(21)
Chinese Academy of Sciences (CN), University of South-Eastern Norway (NO), Energy Research Institute (CN), Institute of Coal Chemistry (CN), Taiyuan University of Technology (CN), Minnan Normal University (CN)
National Natural Science Foundation of China, Shanxi Scholarship Council of China, Natural Science Foundation of Shanxi Province, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Fund for Shanxi Key Subjects Construction
Openalex Percentile: Top 20%
Chalcogenide Semiconductor Thin Films
1.25
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