Ultrasensitive Flexible Organic Synaptic Transistors Modulated by a Chemically Cross-Linked Solvent-Resistive Ion Composite

We demonstrate a flexible organic synaptic transistor (FOST) with an ion-composite electrolyte film resistant to chemical reagents, which uses a three-dimensionally cross-linked polyimide matrix to accommodate a high-concentration ionic liquid. FOST shows versatile synaptic plasticity for classical conditioning, high-pass filtering, and the learning-forgetting process. The device achieves low-energy consumption down to 1.02 femtojoule per synaptic event with an ultrasensitive impulse to presynaptic spike down to 0.5 mV. Moreover, the electrical performance of the device is still stable after 1000 mechanical bending cycles. These results demonstrate that the device can be applied to future flexible neuromorphic electronics.

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Institutions

Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2024-10-31
DOI
https://doi.org/10.1021/acs.jpclett.4c02522
Citations
4
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.83

Funders

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article

Ultrasensitive Flexible Organic Synaptic Transistors Modulated by a Chemically Cross-Linked Solvent-Resistive Ion Composite

Yang Lu, Wentao Xu, Yao Ni, Huanhuan Wei et al.
4 citations
The Journal of Physical Chemistry Letters
Advanced Memory and Neural Computing
0.83
article

Ultrasensitive Flexible Organic Synaptic Transistors Modulated by a Chemically Cross-Linked Solvent-Resistive Ion Composite

Yang Lu, Wentao Xu, Yao Ni, Huanhuan Wei, Jiangdong Gong, Yi Du
article en
4 citations

Abstract

We demonstrate a flexible organic synaptic transistor (FOST) with an ion-composite electrolyte film resistant to chemical reagents, which uses a three-dimensionally cross-linked polyimide matrix to accommodate a high-concentration ionic liquid. FOST shows versatile synaptic plasticity for classical conditioning, high-pass filtering, and the learning-forgetting process. The device achieves low-energy consumption down to 1.02 femtojoule per synaptic event with an ultrasensitive impulse to presynaptic spike down to 0.5 mV. Moreover, the electrical performance of the device is still stable after 1000 mechanical bending cycles. These results demonstrate that the device can be applied to future flexible neuromorphic electronics.

The Journal of Physical Chemistry LettersVol. 15(44)
Nankai University (CN), City University of Hong Kong, Shenzhen Research Institute (CN)
Nankai University, Natural Science Foundation of Tianjin City, Science, Technology and Innovation Commission of Shenzhen Municipality, National Key Research and Development Program of China, National Science Fund for Distinguished Young Scholars, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 26%
Advanced Memory and Neural Computing
0.83
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Ultrasensitive Flexible Organic Synaptic Transistors Modulated by a Chemically Cross-Linked Solvent-Resistive Ion Composite — Yang Lu, Wentao Xu, et al. · The Journal of Physical Chemistry Letters (2024) | TGRS Research Map | TGRS