Gate control of superconducting current: Mechanisms, parameters, and technological potential

In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS, and the material and device parameters that mostly affect it based on the evidence reported. We conclude that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS can have toward high-performance computing with low-energy dissipation and quantum technologies.

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Publication Details

Journal
Applied Physics Reviews
Published
2024-10-31
DOI
https://doi.org/10.1063/5.0222371
Citations
14
Primary Topic
Physics of Superconductivity and Magnetism
Type
article
Field-Weighted Citation Impact
4.04

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article

Gate control of superconducting current: Mechanisms, parameters, and technological potential

Martin Berke, Wolfgang Belzig, Elke Scheer, Péter Makk et al.
14 citations
Applied Physics Reviews
Physics of Superconductivity and Magnetism
4.04
article

Gate control of superconducting current: Mechanisms, parameters, and technological potential

Martin Berke, Wolfgang Belzig, Elke Scheer, Péter Makk, François Joint, Giorgio De Simoni, Mario Cuoco, A. Iorio, Angelo Di Bernardo, Leon Ruf, Claudio Puglia, Francesco Giazotto, Tosson Elalaily, Simone Gasparinetti, Szabolcs Csonka, Sara Khorshidian, Jonathan A. Koch
article en
14 citations

Abstract

In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS, and the material and device parameters that mostly affect it based on the evidence reported. We conclude that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS can have toward high-performance computing with low-energy dissipation and quantum technologies.

Applied Physics ReviewsVol. 11(4)
University of Salerno (IT), Scuola Normale Superiore (IT), University of Konstanz (DE), Tanta University (EG), Budapest University of Technology and Economics (HU), Istituto Nanoscienze (IT), Montavid Thermodynamic Research Group (HU), Momentum Research (US), Chalmers University of Technology (SE)
Horizon 2020 Framework Programme
Affordable and clean energy
Openalex Percentile: Top 5%
Physics of Superconductivity and Magnetism
4.04
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