Structural characterization and dosimetric response evaluation of (SnO<sub>2</sub>)<sub>0.3</sub>(TiO<sub>2</sub>)<sub>0.7</sub> thin film

This study investigates the effect of X-ray radiation on the I-V characteristics of (SnO2)0.3(TiO2)0.7 thin film in a voltage range of 0- 8 The thin film was developed using the aerosol assisted chemical deposition technique. The amorphous character of the films was shown by the XRD spectra, which showed peaks corresponding to SnO2 and TiO2. Smooth surface morphology with tiny poses was indicated by the FESEM picture, and 2.73 μm film thickness was identified in the cross-sectional investigation. The I-V characteristics result indicates that the electrical conductivity changes throughout a range of applied voltages, from 0 to 8 V. The I-V characteristic measurements obtained during irradiation with X-ray dosage (dose rate) ranging from 100 cGy (250 cGy/min) to 200 cGy (350 cGy/min) and a voltage range of 1.0V to 8.0 V indicate that the current increases linearly with X-ray doses and dose rate. The thin film’s ability to undergo structural changes due to X-ray radiation makes it a valuable dosimetric sensor.