Synaptic Properties of an Interfacial Memristor Based on a Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub> Heterojunction
Memristors have been extensively studied for tremendous potential for future neuromorphic computing hardware applications because of their ability to imitate biological synaptic processes. Herein, we report an interfacial memristor based on a Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub> heterojunction that shows stable bipolar resistive switching behavior, long retention time, and high switching ratio. The conductance of the Au/Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub>/In memristor can be gradually modulated under the voltage sweep mode as well as positive and negative pulse voltage stimulations, respectively, thus realizing the long-term potentiation/depression characteristics of the simulated biological synapse. A neural network based on the prepared memristor was built to recognize the handwritten picture data set with a recognition accuracy of 92.78% by using the NeuroSimV3.0 platform. Our work indicates that the Ga<sub>2</sub>O<sub>3</sub>/Nb:SrTiO<sub>3</sub> heterojunction memristor has significant potential in a neuromorphic computing system.
Authors
- Wei Hu (ORCID: https://orcid.org/0000-0003-0146-5056)
- Youhong Wang (ORCID: https://orcid.org/0000-0001-8438-3149)
- Kaijin Kang (ORCID: https://orcid.org/0000-0002-6996-1008)
- Caili Dong (ORCID: https://orcid.org/0009-0006-0400-8255)
- Xiaosheng Tang (ORCID: https://orcid.org/0000-0003-4402-391X)
Institutions
- Chongqing University of Posts and Telecommunications (CN)
- Chongqing University (CN)
Publication Details
- Journal
- The Journal of Physical Chemistry Letters
- Published
- 2024-10-31
- DOI
- https://doi.org/10.1021/acs.jpclett.4c02548
- Citations
- 6
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- Natural Science Foundation of Chongqing
- Fundamental Research Funds for the Central Universities