Comparative Study of Zinc Sulfide Thin Films Fabricated by Spin Coating and Rf Magnetron Sputtering as a Buffer Layer for 2nd Generation Photovoltaics

To meet the requirements of second generation photovoltaics, spin coating and RF magnetron sputtering techniques have been utilized to fabricate zinc sulfide thin films for buffer layer optimization. During fabrication process, substrate temperatures for spin coating and RF magnetron sputtering processes are kept at room temperature and at 200 oC, respectively. Thin films are annealed at 500oC for 1 hour in an inert environment to acquire crystallinity and uniform surface morphology. XRD analysis reveals that thin films fabricated by spin coating and RF magnetron sputtering exhibit wurtzite and zinc blende crystal structures, respectively. SEM shows that the surface morphology of thin films fabricated by both techniques is uniform and homogeneous without voids and cracks. EDS results indicate that thin films fabricated via spin coating have equal stoichiometric ratio of zinc to sulfur (1:1). Whereas, an unequal stoichiometric ratio of zinc to sulfur is detected in RF magnetron sputtered thin films. According to optical studies, spin coated zinc sulfide thin films have 67% transmission with an energy band gap of 3.62 eV. While, RF magnetron sputtered thin films have 76% transmission with a wide energy band gap of 3.70 eV. Electrical properties depict that thin films fabricated by RF magnetron sputtering have higher carrier concentration, lower resistivity and higher conductivity than spin coated thin films. In comparison, RF magnetron sputtered zinc sulfide thin films exhibit best structural and optoelectronic properties for buffer layer in second generation solar cells.