Optimizing carrier transport properties in the intrinsic layer of a-Si single and double junction solar cells through numerical design

This research aims to improve the performance of a-Si: H solar cells, particularly in terms of carrier transport properties, through a numerical design approach utilizing AFORS-HET simulation software. By performing a series of rigorous computer simulations, we explore the potential regulation of the intrinsic layer thickness, carrier mobility, loading factor, and density of states (DoS) distribution in the solar cell's intrinsic layer. Recombination losses are reduced, and light absorption efficiency is significantly increased when the intrinsic layer thickness is adjusted, as shown by simulation findings. Moreover, reduction of transit times and enhancement of the total efficiency of the solar cells depend on increased carrier mobility. Parameters can be adjusted to attain optimal performance under various operating situations by adjusting the DoS and load factors. Furthermore, the simulations provide insightful information about the interactions between the junctions in solar cells with double junctions. Our results of this research provide an important contribution to efforts to develop more efficient and sustainable a-Si: H solar cells and emphasize the importance of numerical design approaches in photovoltaic technology.