A 14-GHz LC-VCO with SiGe Anti-Parallel Core Configuration and a High-Quality Inductor

In this paper, A 14-GHz LC Voltage-Controlled Oscillator (VCO) is introduced employing a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) anti-parallel core. The design introduces a high quality factor inductor alongside a 3-bit binary-weighted capacitor bank, which utilizes SiGe anti-parallel switches. This setup integrates a secondary LC-VCO in an anti-parallel arrangement with the primary core, further enhanced by a inverse-active SiGe HBT current mirror applied to both cores. The developed VCO achieves a Frequency Tuning Range (FTR) of 11.6%, covering frequencies from 13.26 to 14.9 GHz, and records a low phase noise (PN) of -116.2 dBc/Hz at a 1 MHz offset from 14 GHz, demonstrating 5.6 dB enhancement compared to the single-core VCO, with low 1/f<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> corner frequency of 150 kHz.

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Published
2024-09-23
DOI
https://doi.org/10.23919/eumic61603.2024.10732332
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A 14-GHz LC-VCO with SiGe Anti-Parallel Core Configuration and a High-Quality Inductor

Jeffrey W. Teng, Arya Moradinia, John D. Cressler, Wonsub Lim et al.
Radio Frequency Integrated Circuit Design
article

A 14-GHz LC-VCO with SiGe Anti-Parallel Core Configuration and a High-Quality Inductor

Jeffrey W. Teng, Arya Moradinia, John D. Cressler, Wonsub Lim, Nelson E. Lourenco, Christopher T. Coen, Clifford D. Cheon
article en

Abstract

In this paper, A 14-GHz LC Voltage-Controlled Oscillator (VCO) is introduced employing a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) anti-parallel core. The design introduces a high quality factor inductor alongside a 3-bit binary-weighted capacitor bank, which utilizes SiGe anti-parallel switches. This setup integrates a secondary LC-VCO in an anti-parallel arrangement with the primary core, further enhanced by a inverse-active SiGe HBT current mirror applied to both cores. The developed VCO achieves a Frequency Tuning Range (FTR) of 11.6%, covering frequencies from 13.26 to 14.9 GHz, and records a low phase noise (PN) of -116.2 dBc/Hz at a 1 MHz offset from 14 GHz, demonstrating 5.6 dB enhancement compared to the single-core VCO, with low 1/f<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> corner frequency of 150 kHz.

Georgia Institute of Technology (US), Georgia Tech Research Institute
Affordable and clean energy
Openalex Percentile: Top 83%
Radio Frequency Integrated Circuit Design
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