A 23.9 dBm Q-Band Power Amplifier in 22nm FD-SOI Using Resonated Amplifier Cores
This paper presents a 34 to 42 GHz power amplifier (PA) in GlobalFoundries’ 22 nm fully-depleted silicon on insulator (FDSOI) technology. The amplifier provides a saturated output power of 23.9 dBm from a 1.6 V supply at 38 GHz, while achieving a peak power added efficiency (PAE) of 20.8 %. This high output power is enabled by applying a novel PA core design method for large PAs to this technology. The PA achieves an average PAE of 6.2 % at -25 dB EVM for a 2.4Gb/s 64-QAM input signal at 38 GHz.
Authors
- Ahmet Çağrı Ulusoy (ORCID: https://orcid.org/0000-0001-5718-2827)
- Alexander Haag (ORCID: https://orcid.org/0009-0008-7794-2561)
Institutions
- Karlsruhe Institute of Technology (DE)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732824
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00