Electrically Pumped GeSn Micro-Ring Lasers
Recent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first demonstrations of electrically pumped lasers. In this work, the performance of electrically-pumped double heterostructure GeSn ring laser diodes are evaluated as a function of their geometry and pumping pulse time. In particular, the trade-off between the band structure, i.e., the directness of the GeSn band gap, and the device heat dissipation is discussed in terms of their impact on the emission intensity and threshold current density.
Authors
- A. Chelnokov (ORCID: https://orcid.org/0000-0002-2771-4199)
- Omar Concepción (ORCID: https://orcid.org/0000-0001-8197-7523)
- Lukas Seidel (ORCID: https://orcid.org/0000-0002-9147-7300)
- Teren Liu (ORCID: https://orcid.org/0000-0003-1060-3350)
- Dan Buca (ORCID: https://orcid.org/0000-0002-3692-5596)
- Michael Oehme (ORCID: https://orcid.org/0000-0002-1637-1338)
- Vincent Reboud (ORCID: https://orcid.org/0000-0002-6426-4940)
- Detlev Grützmacher (ORCID: https://orcid.org/0000-0001-6290-9672)
- Giovanni Capellini (ORCID: https://orcid.org/0000-0002-5169-2823)
Institutions
- University of Stuttgart (DE)
- Roma Tre University (IT)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Stuttgart Technical University of Applied Sciences (DE)
- Jülich Aachen Research Alliance (DE)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
Publication Details
- Journal
- IEEE Journal of Selected Topics in Quantum Electronics
- Published
- 2024-10-31
- DOI
- https://doi.org/10.1109/jstqe.2024.3489712
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00