A 24 GHz 14 W/22 W GaN Power Amplifier MMICs for Millimeter Wave band Wireless Power Transfer

This paper presents the design and measurement of a 24 GHz band 14 W/22 W output power and 36.3%/29% power added efficiency (PAE) GaN power amplifier (PA) microwave monolithic integrated circuits (MMICs) for millimeter wave band wireless power transfer. The GaN PA MMICs are fabricated on a 50 μm thick SiC using a 0.15 μm gate-length GaN process. A three-stage cascaded PA with a low-loss output circuit and a balanced PA with Lange coupler us realized, which achieves excellent output power and PAE. The fabricated single-ended and balanced GaN PA MMIC achieves 41.5 dBm (14.1 W) and 43.6 dBm (22.9 W) of continuous wave (CW) output power and PAEs of 36.3% and 29% in 24 GHz.