High-Sensitivity 270-320 GHz InGaAs-Based Power Detector with Temperature-Compensation Mechanism

This paper presents the design and measured performance of the first power detector tailored for power monitoring in communication systems operating in the frequency range of 270 GHz to 320 GHz. State-of-the-art sensitivity of 2.5 kV/W for a 300 GHz sinusoidal signal and state-of-the-art layout compactness with a 300 um to 200 um core size are achieved. The high sensitivity is reached by utilizing a reduced conduction angle of 140° of a common-source InGaAs mHEMT-based amplifier. A temperature-compensation mechanism is included in the compact core of the design and its performance is investigated in the range of 298 K to 338 K.

Authors

Institutions

Publication Details

Published
2024-09-23
DOI
https://doi.org/10.23919/eumic61603.2024.10732298
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

High-Sensitivity 270-320 GHz InGaAs-Based Power Detector with Temperature-Compensation Mechanism

Arnulf Leuther, Benjamin Schoch, Dominik Wrana, Lukas Gebert et al.
1 links
Semiconductor materials and interfaces
article

High-Sensitivity 270-320 GHz InGaAs-Based Power Detector with Temperature-Compensation Mechanism

Arnulf Leuther, Benjamin Schoch, Dominik Wrana, Lukas Gebert, A. Tessmann, Ingmar Kallfass, Thomas Ufschlag, Sandrine Wagner
article en

Abstract

This paper presents the design and measured performance of the first power detector tailored for power monitoring in communication systems operating in the frequency range of 270 GHz to 320 GHz. State-of-the-art sensitivity of 2.5 kV/W for a 300 GHz sinusoidal signal and state-of-the-art layout compactness with a 300 um to 200 um core size are achieved. The high sensitivity is reached by utilizing a reduced conduction angle of 140° of a common-source InGaAs mHEMT-based amplifier. A temperature-compensation mechanism is included in the compact core of the design and its performance is investigated in the range of 298 K to 338 K.

University of Stuttgart (DE), Fraunhofer Institute for Applied Solid State Physics (DE)
Affordable and clean energy
Openalex Percentile: Top 82%
Semiconductor materials and interfaces
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.