SiGe HBT integrated in a 22 nm FDSOI

22 nm BiCMOS process, based on the co-integration of the classical 22 nm FDSOI technology and the SiGe-based NPN vertical HBTs, is reported here. The HBTs are fabricated on a hybrid region on the wafer, where the buried oxide was removed. The CMOS integration was adapted to accommodate the additional HBT process steps and to prevent any high-k oxide contamination, yet to preserve the baseline functionality. The bipolars show peak f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> and f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> of around 410 and 490 GHz, respectively. The standard logic nFETs and pFETs display a nearly 100% DC performance matching to the baseline and minimal targeting offset. The BiCMOS process has a very limited impact on the overall logic yield. This first ever high performance SiGe HBT integration in a HKMG CMOS process validates viability for future millimeter-wave range applications.

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Publication Details

Published
2024-09-23
DOI
https://doi.org/10.23919/eumic61603.2024.10732195
Primary Topic
Photonic and Optical Devices
Type
article
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article

SiGe HBT integrated in a 22 nm FDSOI

M. Majer, Halid Mulaosmanovic, A. Zeun, Victorien Paredes-Saez et al.
Photonic and Optical Devices
article

SiGe HBT integrated in a 22 nm FDSOI

M. Majer, Halid Mulaosmanovic, A. Zeun, Victorien Paredes-Saez, Franziska Köhler, S. Nielsen, John J. Pekarik, A. Dietel, A. Hellmich, P. Baars, Vibhor Jain, Alvin Joseph, K. Li, V. Jaschke, Alexander Derrickson, Rico Huselitz, Carsten Reichel, H. S. Chen, Matthias Ruhm, Lena Fürst, J. Johnson, Frank Großmann, Frieder Koch, D. Angot, S. Langdon, H. P. Freund, A. C. Ott, Steffen Müller, J. Holt, A.-S. Seidel, Steffen Lehmann, M. Zier, S. Diessner
article en

Abstract

22 nm BiCMOS process, based on the co-integration of the classical 22 nm FDSOI technology and the SiGe-based NPN vertical HBTs, is reported here. The HBTs are fabricated on a hybrid region on the wafer, where the buried oxide was removed. The CMOS integration was adapted to accommodate the additional HBT process steps and to prevent any high-k oxide contamination, yet to preserve the baseline functionality. The bipolars show peak f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> and f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> of around 410 and 490 GHz, respectively. The standard logic nFETs and pFETs display a nearly 100% DC performance matching to the baseline and minimal targeting offset. The BiCMOS process has a very limited impact on the overall logic yield. This first ever high performance SiGe HBT integration in a HKMG CMOS process validates viability for future millimeter-wave range applications.

GlobalFoundries (United States) (US), GlobalFoundries (Germany) (DE)
Affordable and clean energy
Openalex Percentile: Top 83%
Photonic and Optical Devices
DOISourceOpenAlex
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