Prediction of the Large-Signal GaN HEMT Performance Using Accurate TCAD-Compact Modeling Method

Accurate prediction of the large-signal power performance of gallium nitride (GaN) high electron mobility transistors (HEMTs) can be achieved by combining TCAD device modeling with the RF simulations of a physics-based compact model, equipped with a precise trap description. A TCAD computational framework well-calibrated with small-signal and drain-lag measurements from an AlGaN/GaN device served as an input for compact model extraction. The validity of the approach is confirmed through comparison with measurements on devices with different dimensions and locations on the wafer.