A High-Pass Distributed Amplifier Operating from 215GHz – 315GHz in a 35nm InGaAs mHEMT Technology
In this paper, a high-pass distributed amplifier is presented. The distributed amplifier consists of four parallel gain cells using RF shorted stubs at each gain cell at the gate and drain line connection. This way, the classical low-pass artificial transmission line is transformed into a pseudo high-pass artificial transmission line. Small signal measurements and large signal simulation results are shown. The targeted operation band is the WR3.4-Band (220-330 GHz). A 3dB-bandwidth of up to 100 GHz is measured. A maximum gain of up to 9.4 dB is achieved in small signal measurements. The amplifier is produced in a 35 nm InGaAs mHEMT technology.
Authors
- Benjamin Schoch (ORCID: https://orcid.org/0000-0003-1380-4174)
- Dominik Wrana (ORCID: https://orcid.org/0000-0002-8282-9060)
- Simon Haußmann (ORCID: https://orcid.org/0009-0009-7882-584X)
- Lukas Gebert (ORCID: https://orcid.org/0009-0009-4658-5941)
- Axel Tessmann
- Ingmar Kallfass (ORCID: https://orcid.org/0000-0001-6006-3124)
- Thomas Ufschlag (ORCID: https://orcid.org/0009-0003-5808-3865)
- Sandrine Wagner
Institutions
- University of Stuttgart (DE)
- Fraunhofer Institute for Applied Solid State Physics (DE)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732452
- Citations
- 3
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.01
Funders
- Ministry of Education