Nonlinear Modeling of CMOS Compatible SiN/AlN/GaN MIS-HEMT on 200mm Si Operating at mm-Wave Frequencies

The performance of a CMOS-compatible SiN/AlN/GaN MIS-HEMT on 200mm Silicon substrate with high power capabilities in Ka band is evaluated. The devices show an F<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf>/F<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> of 80/170 GHz for 2x50x0.15 µm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> topology, along with outstanding and competitive large signal performance compared to GaN/SiC at 40 GHz. The devices demonstrate a power added efficiency PAE of 40% and an output saturated power (Psat) of 6.6 W/mm. To fully benefit from the capabilities of this new technology, an empirical Angelov model was modified to accurately describe the electrical behavior of the devices. The proposed model is validated through 40 GHz load pull measurement/simulation comparison and will be used in designing next MMIC PA (Power Amplifiers) dedicated to Ka-Ku band applications.