G-Band Large-Signal Characterization of InP/GaAsSb DHBTs with Record 38% Power Added Efficiency at 170 GHz
We report the small- and large- signal performance of 250 nm InP/GaAsSb Double Heterojunction Bipolar Transistors (DHBTs) with an optimized epitaxial structure for high power and high efficiency applications in G-band. In class-A operation at 170 GHz, we show a saturated output power P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT,SAT</inf> = 10.7 dBm with a simultaneous record power-added efficiency PAE = 38.6%. Combined with the reported small-signal cut-off frequencies f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf>/f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</inf> > 0.5/1.1 THz, this makes InP/GaAsSb DHBTs very attractive for high-power and high-efficiency sub-mm-wave power amplifiers (PA).
Authors
- C. R. Bolognesi (ORCID: https://orcid.org/0000-0002-5651-4532)
- Filippo Ciabattini (ORCID: https://orcid.org/0000-0002-2063-3580)
- Sara Hamzeloui (ORCID: https://orcid.org/0000-0002-9607-1238)
- Akshay M. Arabhavi (ORCID: https://orcid.org/0000-0001-9299-1670)
- Olivier Ostinelli (ORCID: https://orcid.org/0000-0002-7828-8310)
- Mojtaba Ebrahimi (ORCID: https://orcid.org/0000-0002-2536-0673)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732074
- Citations
- 7
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 1.46