5-55 GHz Watt-level Gallium Nitride Stacked FET Travelling-Wave Power Amplifier
Two well-known ultra wide-band topologies, the travelling-wave amplifier and the stacked cell, are gainfully employed to demonstrate a decade bandwidth behaviour (5-55 GHz) in conjunction with watt-level saturated output power. The selected technology is OMMIC’s Gallium Nitride on Silicon, featuring the possibility to simultaneously insert 60-nm and 100-nm gate length FETs in the same MMIC.
Authors
- Sergio Colangeli
- Patrick E. Longhi (ORCID: https://orcid.org/0000-0003-0923-5917)
- Ernesto Limiti (ORCID: https://orcid.org/0000-0003-4668-7461)
- Marco Pirola (ORCID: https://orcid.org/0000-0002-5759-9697)
- Chiara Ramella (ORCID: https://orcid.org/0000-0003-0634-1474)
- Walter Ciccognani (ORCID: https://orcid.org/0000-0002-8027-2449)
Institutions
- University of Rome Tor Vergata (IT)
- Politecnico di Torino (IT)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732117
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62