GaN FET Current Change and Recovery During and After Gamma Radiation
GaN FET devices are measured, not only before and after, but also during exposure to cobalt-60 gamma radiation. Threshold voltage and drain-gate current variations are observed from CW measurements and the threshold shift compared to control devices. Uniquely, pulsed measurements are also utilised. Results suggest that the effect of the radiation is simple heating.
Authors
- Melissa C. Gorman (ORCID: https://orcid.org/0009-0000-3921-3976)
- Simon J. Mahon (ORCID: https://orcid.org/0000-0001-9064-5547)
- Anthony E. Parker (ORCID: https://orcid.org/0000-0001-5514-4077)
- Mohamed N. Ahmed
- A. Parker
- E. G. Shelley
- Nicola V. Lubczyk
Institutions
- Macquarie University (AU)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732493
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00