Extension of SC-gate FET Concept to 100 GHz Band and Parallel Connection

This study presents the design and prototype of a GaN high-electron-mobility transistor (HEMT) in which the standing wave controlled gate (SC-gate) concept is extended to high frequencies. Measurements reveal that the maximum available power gain (MAG) improves from 2 to 9 dB, even in the 100 GHz band. A prototype of a 16-parallelled multifinger GaN HEMT is produced by applying the SC-gate concept to control the standing wave in the parallel wiring of a multifinger GaN HEMT. Measurement results verify that the MAG is improved from 0 to 6 dB at 45 GHz.