0.13μm SiGe HBT Linear Power Amplifier for broadband 5G applications (1.8GHz to 5GHz)

A high linear mono die FEM (Front End Module) 1.8-5GHz is presented in this paper. The FEM consists of a 0.13 μm SiGe BiCMOS broadband power amplifier. The power amplifier circuit adopts a class AB reconfigurable bias over bands with external resistor, broad band output matching network and temperature-insensitive bias technique is used to improve linearity over temperature. Measurements at 5V supply with low quiescent current 80-98mA achieve high gain 39dB with 1dB gain flatness over 600MHz. A high linearity of -49dBc in 5G NR 100MHz modulation signals for output power 15 dBm is achieved with P1dB up to 26dBm.