Wideband fully integrated GaN Doherty Power Amplifier Module for 5G massive MIMO applications

This paper presents the design and performances of a power amplifier module (PAM) in 50V GaN technology for C-Band massive-MIMO 5G applications. Thanks to the 2-way inverted E-Doherty architecture, this device presents wide band performances allowing good linearizability for wideband instantaneous bandwidth applications without compromising the efficiency. This 2-stages amplifier delivers an output power (P5dB) higher than 47.5dBm and a linear gain of 30dB. At 39dBm average output power (Pav), with an instantaneous Bandwidth (iBW) of 400MHz, the ACLR after DPD reaches - 50.1dBc and 46.7% linearized total drain efficiency. On dual band application with iBW of 530MHz a linearized ACLR of - 52.3dBc is reached with a total drain efficiency of 45.4%.