20W and 20% PAE 2-10 GHz High-Power Amplifier for Multifunction RF Systems Manufactured in Leonardo’s GaN pHEMT 0.25um Technology
This paper presents the design and measurement of a High Power Amplifier (HPA) for Multifunction RF (MFRF) systems. The amplifier have been designed employing Leonardo’s pHEMT GaN process with 250 nm of gate length (LDO_GN25). The amplifier achieves a mean value of 43 dBm of output power with a mean value of power added efficiency of 20 % in the 2-10 GHz frequency band. This HPA is a suitable amplifier to be integrated in the future Transmit and Receive Modules (TRMs) for Active Electronically Scanned Array (AESA) systems that include Radar, Electronic Warfare (EW) and Communications (COMMs) capabilities in the same system.
Authors
- José Luis Jiménez-Martín
- Antonio Ferreras (ORCID: https://orcid.org/0000-0002-2914-2593)
- Eduardo Oreja-Gigorro
- Juan José Sánchez-Martínez (ORCID: https://orcid.org/0000-0002-3653-822X)
- Antonio Fernández Prieto (ORCID: https://orcid.org/0000-0003-1984-6367)
- Vicente González‐Posadas (ORCID: https://orcid.org/0000-0002-0873-1364)
- Javier Montero‐de‐Paz (ORCID: https://orcid.org/0000-0001-9854-3772)
Institutions
- Indra (Spain) (ES)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732199
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00