Low-Power Dual-Core Inductively Coupled 40 GHz Push-Push VCO in 22nm FDSOI CMOS
We present a 39.6-to-41.8 GHz push-push dual-core cross-coupled voltage-controlled oscillator (VCO) in a 22 nm FDSOI CMOS technology. The two cores are coupled inductively. The passive core coupling device serves multiple purposes: a) as H2 filter to enhance phase noise; b) to provide bias; and c) to extract the second harmonic in a non-invasive way and forward it to the output buffer. The VCO achieves in measurement a low phase noise of −102 dBc/Hz at 1 MHz offset at 39.65 GHz and an output power of − 10 dBm. The VCO including buffers dissipates 24.5 mW from a single 0.75 V supply, while both cores consume only 19.7 mW. Fundamental rejection of better 37 dB is achieved over the entire frequency tuning range (FTR). The chip occupies only 0.3 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> including pads. The circuit achieves a very good FoM of −181 dBc/Hz at 1 MHz offset.
Authors
- M. Ichikawa
- Hiroki Ishikuro (ORCID: https://orcid.org/0000-0002-9919-9923)
- V. Lasserre
- Вадим Іссаков (ORCID: https://orcid.org/0000-0003-3450-8745)
- Fabio Padovan (ORCID: https://orcid.org/0000-0002-6397-1002)
- Liubov Bakhchova (ORCID: https://orcid.org/0000-0003-0629-8357)
- Sarah Koop-Brinkmann
Institutions
- Keio University (JP)
- Infineon Technologies (Austria) (AT)
- Technische Universität Braunschweig (DE)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732114
- Citations
- 1
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.21