CMOS-integrated terahertz dielectric near-field sensor
In this research, we present an electronic near-field sensor designed in 180 nm complementary metal-oxide-semiconductor (CMOS) technology, specifically tailored for terahertz dielectric spectroscopy. Our sensor utilizes a unique on-chip detection mechanism, which allows to probe the dielectric properties of materials in aqueous solutions. We have achieved superior sensitivity values, positioning our sensor at the forefront of terahertz-related techniques.
Authors
- W. Knap (ORCID: https://orcid.org/0000-0003-4537-8712)
- Alexander V. Chernyadiev (ORCID: https://orcid.org/0000-0001-7653-5309)
- Kȩstutis Ikamas (ORCID: https://orcid.org/0000-0002-2165-3866)
- Cezary Kołaciński (ORCID: https://orcid.org/0000-0003-1433-6288)
- Dmytro B. But (ORCID: https://orcid.org/0000-0002-0735-4608)
- Alvydas Lisauskas (ORCID: https://orcid.org/0000-0002-1610-4221)
Institutions
- Vilnius University (LT)
- Institute of High Pressure Physics (PL)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732200
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Regional Development Fund