Characterization of Schottky Diodes at Wafer Level for Frequency Multipliers Applications Based on RF Coplanar Measurements
While Schottky diode for THz generation have been extensively studied over last decades, technological developments are still required to reach the physical limits of these devices, such as breakdown voltage or sub-μm devices, but also efficient thermal management in particular before their integration into waveguide packaging. We propose to investigate the DC/RF performances at device level without any integration/packaging encapsulation that require complex and time-consuming efforts. Thus, we report on initial characterization of on-wafer GaAs Schottky diodes, used as frequency doubler and pumped at 95 GHz.
Authors
- Guillaume Ducournau (ORCID: https://orcid.org/0000-0002-9171-4767)
- Hugo Bouillaud
- J. Treuttel (ORCID: https://orcid.org/0000-0001-5542-9793)
- P. Gellie
- M. Zaknoune (ORCID: https://orcid.org/0000-0001-8195-4196)
- Priyanka Mondal (ORCID: https://orcid.org/0000-0001-7408-9800)
- Yannick Roelens (ORCID: https://orcid.org/0000-0003-2451-2177)
- Étienne Okada (ORCID: https://orcid.org/0000-0001-6571-5945)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Observatoire de Paris (FR)
- Laboratoire d’Etudes du Rayonnement et de la Matière en Astrophysique et Atmosphères (FR)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- Teem Photonics (France) (FR)
- Université Polytechnique Hauts-de-France (FR)
- École Centrale de Lille (FR)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732752
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Equipex