High-Gain 664 GHz Low-Noise Amplifier Modules Based on Advanced InGaAs HEMT Technologies

Two compact WR-1.5 (500–750 GHz) low-noise amplifier (LNA) circuits have been developed, based on miniaturized thin-film microstrip lines (TFMSL) utilizing a 35 nm InGaAs-on-GaAs and a more advanced 20 nm InGaAs-on-Si high electron mobility transistor (HEMT) technology. The fabricated ten-stage InGaAs-on-GaAs LNA circuit achieved a maximum gain of 22 dB at 618 GHz and more than 19 dB in the frequency range from 602 to 672 GHz, while the InGaAs-on-Si S-MMIC demonstrates a small-signal gain of more than 20 dB between 582 and 656 GHz. For low-loss packaging of the circuits, waveguide-to-microstrip transitions (E-plane probes) have been monolithically integrated in the only 25 µm thick LNA MMICs. The realized InGaAs-on-GaAs LNA module achieved an average gain of 18 dB around 660 GHz and a room temperature (T = 293 K) noise figure of 12 dB in the frequency band of operation. The packaged InGaAs-on-Si LNA demonstrated a record gain of well above 20 dB around 620 GHz and an average noise figure of only 11 dB between 620 and 660 GHz.