Design and Experimental Characterization of an Asymmetric GaN MMIC Doherty Power Amplifier for Ka-Band Transmitters

This paper presents the design and experimental characterization of an asymmetric Ka-Band Doherty power amplifier based on a 0.12 µm GaN MMIC process. The design relies on the identification of an optimum load modulation trajectory on the load-pull contours of the main PA. The fabricated prototype shows a peak output power of 34 dBm and an 8-dB back-off power added efficiency of 17% at 28.3 GHz. When tested with a 100 MHz channel 5G signal, the amplifier demonstrates good intrinsic linearity and it is linearizable using digital predistortion.

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Publication Details

Published
2024-09-23
DOI
https://doi.org/10.23919/eumic61603.2024.10732357
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Design and Experimental Characterization of an Asymmetric GaN MMIC Doherty Power Amplifier for Ka-Band Transmitters

Ehsan M. Azad, Roberto Quaglia, Kauser Chaudhry, Joe Gannicliffe
GaN-based semiconductor devices and materials
article

Design and Experimental Characterization of an Asymmetric GaN MMIC Doherty Power Amplifier for Ka-Band Transmitters

Ehsan M. Azad, Roberto Quaglia, Kauser Chaudhry, Joe Gannicliffe
article en

Abstract

This paper presents the design and experimental characterization of an asymmetric Ka-Band Doherty power amplifier based on a 0.12 µm GaN MMIC process. The design relies on the identification of an optimum load modulation trajectory on the load-pull contours of the main PA. The fabricated prototype shows a peak output power of 34 dBm and an 8-dB back-off power added efficiency of 17% at 28.3 GHz. When tested with a 100 MHz channel 5G signal, the amplifier demonstrates good intrinsic linearity and it is linearizable using digital predistortion.

Compound Semiconductor Centre (United Kingdom) (GB), Cardiff University (GB)
Affordable and clean energy
Openalex Percentile: Top 88%
GaN-based semiconductor devices and materials
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