Design and Experimental Characterization of an Asymmetric GaN MMIC Doherty Power Amplifier for Ka-Band Transmitters
This paper presents the design and experimental characterization of an asymmetric Ka-Band Doherty power amplifier based on a 0.12 µm GaN MMIC process. The design relies on the identification of an optimum load modulation trajectory on the load-pull contours of the main PA. The fabricated prototype shows a peak output power of 34 dBm and an 8-dB back-off power added efficiency of 17% at 28.3 GHz. When tested with a 100 MHz channel 5G signal, the amplifier demonstrates good intrinsic linearity and it is linearizable using digital predistortion.
Authors
- Ehsan M. Azad (ORCID: https://orcid.org/0000-0002-3211-8818)
- Roberto Quaglia (ORCID: https://orcid.org/0000-0003-3228-301X)
- Kauser Chaudhry (ORCID: https://orcid.org/0000-0002-2291-1089)
- Joe Gannicliffe
Institutions
- Compound Semiconductor Centre (United Kingdom) (GB)
- Cardiff University (GB)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732357
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00