High-Efficiency 24-GHz Rectifier MMICs using Schottky Barrier Diodes from Foundry

In this study, we examined a method to increase the efficiency of rectifier MMICs by layout modification without violating the design rules of the foundry process. Developing a new semiconductor element for mass production is time consuming, which in this study was an optimized Schottky barrier diode (SBD) for microwave wireless power transfer. Therefore, circuit designers select off-the-shelf and conventional SBDs; however, they cannot improve the essential performance of the selected SBD. We analyzed and demonstrated a method to improve the SBD efficiency by reducing its external resistance within the design rules of the foundry process. We also demonstrated rectifier MMICs with 58% conversion efficiency under 25-dBm input power at 24 GHz.