A 0.5W <3dB IL DC-67GHz SPDT Switch in 16nm FinFET with Local Substrate Floating Technique

This paper presents a low-loss broadband SPDT T/R switch with <3dB insertion loss, >22dB isolation, and half-watt input 1dB compression point at 28GHz in TSMC 16nm FinFET process. By floating the local substrate in the vicinity of the switch device, loss and parasitic reduction can be achieved due to increased shunt impedance in the substrate network. It also helps provide more balanced voltage swing division within stacked transistors. Together with the introduced voltage swing on the deep-n-well to p-substrate diode, significant improvement in large-signal linearity is observed at mm-Wave. The measured prototype achieves DC to 67GHz operation with its performance at 28GHz as 1.86dB insertion loss, 29.4dB isolation, and 27.5dBm input 1dB compression point using only three stacked devices. To the best of our knowledge, this is the first reported mm-Wave SPDT switch using TSMC 16nm FinFET process.