A 258-to-280-GHz 100-Gb/s CMOS Transmitter Element in 40-nm CMOS

In order to realize a 300-GHz band 1D phased array transmitter, we present a 300-GHz CMOS transmitter (TX) that has an elongated shape that can be arranged at a narrow pitch and has wide bandwidth. Specifically, by adjusting the gate width of the MOSFETs in an up-conversion mixer, the intermediate frequency (IF) input matching circuit is removed, and a wider bandwidth of the mixer is achieved. Furthermore, by cascading IF amplifier stages, both high gain and broad bandwidth are achieved. The long stubs required to widen the bandwidth of input/output matching circuits are made into loops to reduce the height of the chip. The proposed TX element is fabricated using a 40-nm CMOS process and demonstrated that it achieves a data rate of 100 Gb/s with a 3-dB bandwidth above 22.5 GHz, a center frequency of 268 GHz.

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Publication Details

Published
2024-09-23
DOI
https://doi.org/10.23919/eumic61603.2024.10732376
Citations
1
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.21
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article

A 258-to-280-GHz 100-Gb/s CMOS Transmitter Element in 40-nm CMOS

Akifumi Kasamatsu, Yoshiki Sugimoto, Shuhei Amakawa, Minoru Fujishima et al.
1 citations
Photonic and Optical Devices
0.21
article

A 258-to-280-GHz 100-Gb/s CMOS Transmitter Element in 40-nm CMOS

Akifumi Kasamatsu, Yoshiki Sugimoto, Shuhei Amakawa, Minoru Fujishima, Satoshi Tanaka, Shunichi Kubo, Shinsuke Hara, Kunio Sakakibara, Kosuke Katayama, Takeshi Yoshida, Kyoya Takano, Sho Okii, Toshiaki Abe, Shun Beppu
article en
1 citations

Abstract

In order to realize a 300-GHz band 1D phased array transmitter, we present a 300-GHz CMOS transmitter (TX) that has an elongated shape that can be arranged at a narrow pitch and has wide bandwidth. Specifically, by adjusting the gate width of the MOSFETs in an up-conversion mixer, the intermediate frequency (IF) input matching circuit is removed, and a wider bandwidth of the mixer is achieved. Furthermore, by cascading IF amplifier stages, both high gain and broad bandwidth are achieved. The long stubs required to widen the bandwidth of input/output matching circuits are made into loops to reduce the height of the chip. The proposed TX element is fabricated using a 40-nm CMOS process and demonstrated that it achieves a data rate of 100 Gb/s with a 3-dB bandwidth above 22.5 GHz, a center frequency of 268 GHz.

Tokyo University of Science (JP), Hiroshima University of Economics (JP), Nagoya Institute of Technology (JP), National Institute of Technology, Tokuyama College (JP), National Institute of Information and Communications Technology (JP)
Affordable and clean energy
Openalex Percentile: Top 47%
Photonic and Optical Devices
0.21
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A 258-to-280-GHz 100-Gb/s CMOS Transmitter Element in 40-nm CMOS — Akifumi Kasamatsu, Yoshiki Sugimoto, et al. · (2024) | TGRS Research Map | TGRS