Ultra-broad Band RF Switches Based on Multilayers MoS₂

Nonvolatile switching phenomena have been observed in various monolayer and multilayers two-dimensional (2D) materials over the past several years. Previous works show that this phenomenon can be exploited to make RF switches for high-frequency data communication thanks to its large band operation. First, we describe the structure of our radio frequency (RF) non-volatile MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> switches, its functioning and its static current–voltage characteristics (I-Vs). The device exhibits an isolation of -30 dB in OFF state at 65 GHz and an insertion loss of –1.5 dB in ON state at 65 GHz for 3 monolayers (MLs). We present the de-embedding method used to extract the device's R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> and C<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> values. For 0.5x0.5 µm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> active part device, we obtained an average of 15.5 Ω and 0.58 fF for 6 MLs device and an average of 13.6 Ω and 1.15 fF for 3 MLs device as R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> and C<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> respectively. Few devices were also measured up to 750 GHz. They exhibit a S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</inf> parameters of -15 dB and -5 dB at 650 GHz in OFF and ON state. Keywords — RF switch, 2D materials, De-embedding