A new 45nm RFSOI Technology Optimized for Low Power, High Performance mmWave Applications
In this paper we introduce a new 45nm technology with a focus on mmWave 5G FEM. The technology features a high resistivity substrate with dual thick Cu for low loss BEOL passives, RVT NFET with fT/fmax ~300/420 GHz and NFmin <0.9 dB at 28 GHz, power amplifier FETs with ft/fmax/Vmax ~150 GHz/350 GHz/1.8X and Switch FET with Ron.Coff ~86 fs. High performance power amplifier (PA), low noise amplifier (LNA) and switch reference circuits are demmostrated. The technology also provides low leakage std cell, I/O and efuse IP.
Authors
- Kishore Bantupalli
- T. Kauerauf
- Seung-Yeop Kook
- K. Shanbhag
- Elan Veeramani
- Himani Kamineni (ORCID: https://orcid.org/0009-0005-0863-5064)
- Vibhor Jain (ORCID: https://orcid.org/0000-0003-1836-522X)
- Z. Al-Husseini
- T. Ravi S. Mullapudi (ORCID: https://orcid.org/0000-0003-0593-0189)
- S. Jain
- P. Srinivasan (ORCID: https://orcid.org/0000-0002-9973-5212)
- Tamilmani Ethirajan (ORCID: https://orcid.org/0000-0002-0279-6968)
- O. H. Gonzales
- Tiras Y. Lin (ORCID: https://orcid.org/0000-0002-3377-9933)
- J. Costa
- Hari Kishore Kakara
- You Li (ORCID: https://orcid.org/0000-0003-3785-0976)
- V. Vanukuru
- Jimin Lee
- Ipsita Das (ORCID: https://orcid.org/0000-0002-5170-2139)
- Yue Hu (ORCID: https://orcid.org/0009-0007-1435-4386)
- T. Chowdhury (ORCID: https://orcid.org/0000-0002-2681-8105)
- S. Syed
- Ted Letavic
- D. Aravamudhan
Institutions
- GlobalFoundries (United States) (US)
- Global Hospitals (IN)
- GlobalFoundries (Germany) (DE)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732257
- Citations
- 2
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.42