GaN Schottky Diodes Parameter Extraction Model from S-Parameters Measurement
GaN-on-sapphire Schottky barrier diodes (SBDs) have been fabricated for frequency multiplier applications. A complete set of characterization has been done, including DC and RF measurements. A model to extract the Schottky parameters from S-parameters measurements in small diodes is proposed, obtaining good capacitance agreement compared with that extracted from capacitance-voltage (C-V) measurements carried out in large-area diodes where the parasitic effects are not significant.
Authors
- B. Orfao (ORCID: https://orcid.org/0000-0003-4138-9537)
- J. Mateos (ORCID: https://orcid.org/0000-0003-4041-7145)
- Malek Zegaoui
- M. Zaknoune (ORCID: https://orcid.org/0000-0001-8195-4196)
- T. González (ORCID: https://orcid.org/0000-0002-3706-3211)
- Yannick Roelens (ORCID: https://orcid.org/0000-0003-2451-2177)
- Sylvie Lépilliet
- Mahmoud Abou-Daher
- G. Ducournau
- Étienne Okada (ORCID: https://orcid.org/0000-0001-6571-5945)
Institutions
- Universidad de Salamanca (ES)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- Teem Photonics (France) (FR)
Publication Details
- Published
- 2024-09-23
- DOI
- https://doi.org/10.23919/eumic61603.2024.10732802
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- Equipex