High Performance Analog Switch Based on Body Bias Reduction
A dual channel single pole, single throw analog switch architecture developed in 180 nm CMOS process with low ON resistance is proposed. A technique for diminishing the body bias effect on MOS threshold voltage is used in the transmission gate. The analog switch can work with voltages ranging from 1.6 - 5.5 V, in an extended temperature interval [−55°C÷125°C]. Nanoseconds enable/disable times and a near -100 dB OFF isolation capability are proved.
Authors
- Gheorghe Brezeanu (ORCID: https://orcid.org/0000-0002-9026-3992)
- Florin Drăghici (ORCID: https://orcid.org/0000-0001-8889-8115)
- Ionelia-Bianca Brezeanu (ORCID: https://orcid.org/0000-0001-9190-1805)
Institutions
- Universitatea Națională de Știință și Tehnologie Politehnica București (RO)
Publication Details
- Published
- 2024-10-09
- DOI
- https://doi.org/10.1109/cas62834.2024.10736800
- Primary Topic
- Wireless Body Area Networks
- Type
- article
- Field-Weighted Citation Impact
- 0.00