Investigation of Thermal Resistance Extraction of GaN HEMTs through DCT Measurements Techniques and TCAD-Based Physical Simulations

In this paper, we extract the thermal resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf>) of an AlGaN/GaN HEMT using a simple approach based on Drain Current Transient (DCT) spectroscopy technique. Previous work confirms that acceptor-like traps present in the Fe-doped GaN buffer are responsible for the drain-lag effect observed in the measurement. The main goal of this work is the use of trap emission time constant which is very sensitive to temperature. The extracted R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> using the new approach was around 13 °C.mm/W. TCAD confirms that the R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> determined using the new measurement approach represents the R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> located around 150 nm under the gate.