SWIR Photosensing of GeSn-HfO<sub>2</sub> Films with Small Si Amount
In this paper, short-wave infrared (SWIR) photosensing of GeSn-HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films with small Si amount is studied in correlation with structure and composition of films. SiGeSnHfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films are deposited by magnetron sputtering and nanostructured by subsequent rapid thermal annealing. XRD and Raman spectroscopy investigations are carried out revealing the SiGeSn nanocrystallization in annealed films. Spectral responsivity shows enhanced sensitivity up to 2 μm due to SiGeSn nanocrystals (NCs) and clusters with contribution from disorder.
Authors
- Magdalena Lidia Ciurea (ORCID: https://orcid.org/0000-0002-4300-3071)
- Ionel Stavarache (ORCID: https://orcid.org/0000-0002-6405-9912)
- A. Slav (ORCID: https://orcid.org/0000-0001-5664-0101)
- Cătălin Palade (ORCID: https://orcid.org/0000-0001-9883-1491)
- Ana‐Maria Lepadatu (ORCID: https://orcid.org/0000-0003-3301-5156)
- Ioana Dascalescu (ORCID: https://orcid.org/0000-0002-7451-8879)
- T. Stoïca (ORCID: https://orcid.org/0000-0003-2294-8452)
- Ovidiu Cojocaru (ORCID: https://orcid.org/0000-0001-6929-7779)
Institutions
- National Institute of Materials Physics (RO)
Publication Details
- Published
- 2024-10-09
- DOI
- https://doi.org/10.1109/cas62834.2024.10736731
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00