Investigation of Electrical Transport in Nanostructured V<sub>2</sub>O<sub>5</sub> Thin Films
We have investigated the structure and electrical properties of vanadium oxide thin films deposited by RF sputtering on p-type Si substrates and annealed at 600°C in inert atmosphere. Scanning Electron Microscopy and Raman spectroscopy evidence the growth of V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> nanostructured films, with the morphology and structure dependent on the oxygen concentration in the deposition plasma. The electrical characteristics I(T) of Au/Si/V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf>/Au two terminal devices, measured in the temperature range from 20 to 130°C, reveal that changes in the electrical conduction mechanism take place between 70 and 90°C. The polarization, P(V), and I(V) characteristics bring further evidence that, besides temperature, charge accumulation at the Si/V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> interface may play a role in the carriers transport through the device.
Authors
- R. Plugaru (ORCID: https://orcid.org/0000-0001-7406-1517)
- Florin Comănescu
- Silviu Vulpe (ORCID: https://orcid.org/0000-0002-3269-1382)
- Gabriel Crăciun (ORCID: https://orcid.org/0000-0002-7886-578X)
Institutions
- National Institute for Research and Development in Microtechnologies (RO)
Publication Details
- Published
- 2024-10-09
- DOI
- https://doi.org/10.1109/cas62834.2024.10736813
- Primary Topic
- Transition Metal Oxide Nanomaterials
- Type
- article
- Field-Weighted Citation Impact
- 0.00