Extraction of Package Related Stress Effects in 180 nm SOI Technology

This paper presents the changes of electrical parameters for n-channel MOSFET devices in a 180 nm SOI technology under externally applied mechanical stress. The measurement setup is shown. The deviations of the device parameters are evaluated for different orientations of the devices and the applied stress. For the first time, the changes of the electron mobility and the threshold voltage are extracted as piezo coefficients for the EKV model demonstrating an accuracy of 10 % for the stress sensitivity of the drain current deviation <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\Delta \text{ID} / \text{ID}$</tex>.