Novel Single-Carrier Punchthrough CMESFET

In this article, we propose a punchthrough nMES (PTnMES) with source/drain Schottky contact, which eliminates the need for doping. We utilized the Sentaurus TCAD tool for the design and optimization of our devices. Adjusting the Schottky contact to source and drain enables the subthreshold swing of PTnMES to resemble that of pMES. No resizing is necessary, thus resolving the issue of area occupancy resulting from the need to widen pMES due to insufficient hole mobility. We compared the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {ON}}$ </tex-math></inline-formula> ratio of PTnMES to that of nMES, achieving a maximum ratio of 1.081, which significantly surpasses the hole mobility of pMES. The results evaluated the performance of CMES (CMESFET stands for Complementary MEtal-Semiconductor Field-Effect Transistor, abbreviated as CMES) and compared it with other stacked CMOS and CFET devices. The voltage gain achieved was 18.67 V/V at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {D}} =0.5$ </tex-math></inline-formula> V, demonstrating superior performance. Considering the significant disparity in electron and hole mobility in III–V or II–VI materials, constructing single-carrier devices is a good choice, and it would significantly enhance the reliability and stability of microwave circuits.