Ultra Scaled Nanosheet & Nanowire FETs Performance Evaluation with 3D Monte Carlo Simulations for Future Technology

Nanosheet and nano wire field-effect transistors (FETs) have gained significant attention as alternatives for sub-3 nm CMOS technology. In this study, we investigate the impact of equivalent oxide thickness (EOT) and variations in the n-type maximum doping on these two architectures. An in-house 3D finite element Monte Carlo simulation device toolbox, with incorporated Schrödinger equation quantum corrections, is employed to study the device performance through technologically achievable alterations of architecture. Our findings indicate that nanosheets outperform nanowires in the ON current. Additionally, we observed that variations in EOT have a less impact on the 12 nm and 10 nm gate length nanowire FETs compared to the equivalent gate length nanosheet FETs, while the changes in the maximum doping concentration have a pronounced impact on nanowire FETs compared to nanosheet FETs.