A Novel Class-AB Buffer for LDOs with High Accuracy and Fast Transients
This paper presents a low dropout (LDO) regulator that employs a novel class AB buffer with series-shunt feedback to drive the power stage. A design example validates the proposed topology: an LDO implemented in a standard CMOS process maintains the output voltage at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1. 5\mathrm{V}+/-3\%$</tex>, the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$+/-45\text{mV}$</tex> including responses to fast <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$($Tedge $=100\text{ns})$</tex> jumps of the supply varies between 1.8V and 2.5V, and of the load current between zero and 100mA, as well as temperature variations from −40°C to125°C.
Authors
- Raul Oneț (ORCID: https://orcid.org/0000-0003-0891-2015)
- Marius Neag (ORCID: https://orcid.org/0000-0003-2761-6318)
- Petru-Rares Moldovan
- George-Gabriel Simeon
- Cosmin-Sorin Plesa
Institutions
- Technical University of Cluj-Napoca (RO)
- Infineon Technologies (United Kingdom) (GB)
Publication Details
- Published
- 2024-10-09
- DOI
- https://doi.org/10.1109/cas62834.2024.10736770
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00